Datasheet > PHC21025T/R

PHC21025T/R

更新时间： 2024-02-04 19:22:36

品牌	Logo	应用领域
恩智浦 - NXP		开关光电二极管晶体管
页数	文件大小	规格书
16页	240K
描述
TRANSISTOR 3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8, FET General Purpose Small Signal

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数据手册

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PHC21025T/R 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.6	Is Samacsys：	N
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e4
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL AND P-CHANNEL	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)	Base Number Matches：	1

PHC21025T/R 数据手册

PHC21025

SO8

Complementary intermediate level FET

Rev. 04 — 17 March 2011

Product data sheet

1. Product profile

1.1 General description

Intermediate level N-channel and P-channel complementary pair enhancement mode

Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This

product is designed and qualified for use in computing, communications, consumer and

industrial applications only.

1.2 Features and benefits

Low conduction losses due to low

Suitable for high frequency

applications due to fast switching

characteristics

on-state resistance

1.3 Applications

Motor and actuator drivers

Power management

Synchronized rectification

1.4 Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min Typ Max Unit

V_DS

drain-source voltage

T_j≥ 25 °C; T_j≤ 150 °C;

N-channel

T_j≥ 25 °C; T_j≤ 150 °C;

-30

P-channel

I_D

drain current

T_sp≤ 80 °C; P-channel

T_sp≤ 80 °C; N-channel

-2.3

3.5

[1]

P_tot

total power dissipation T_amb= 25 °C

Static characteristics

R_DSondrain-source on-state V_GS= -10 V; I_D= -1 A;

0.22 0.25

0.08 0.1

Ω

resistance

T_j= 25 °C; P-channel;

see Figure 16; see Figure 19

V_GS= 10 V; I_D= 2.2 A;

T_j= 25 °C; N-channel;

see Figure 15; see Figure 18

12 3 4 5 6 7...16

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