Datasheet > PHC21025T/R

PHC21025T/R

更新时间： 2024-01-25 23:56:48

品牌	Logo	应用领域
恩智浦 - NXP		开关光电二极管晶体管
页数	文件大小	规格书
16页	240K
描述
TRANSISTOR 3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8, FET General Purpose Small Signal

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技术参数
数据手册

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PHC21025T/R 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.6	Is Samacsys：	N
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e4
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL AND P-CHANNEL	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)	Base Number Matches：	1

PHC21025T/R 数据手册

PHC21025

NXP Semiconductors

Complementary intermediate level FET

6. Characteristics

Table 6.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSS

V_GS(th)

I_DSS

drain-source breakdown

voltage

I_D= -10 µA; V_GS= 0 V; T_j= 25 °C;

P-channel

-30

I_D= 10 µA; V_GS= 0 V; T_j= 25 °C;

N-channel

-1

gate-source threshold voltage I_D= -1 mA; V_DS= V_GS; T_j= 25 °C;

P-channel; see Figure 17

-2.8

2.8

-100

100

0.25

I_D= 1 mA; V_DS= V_GS; T_j= 25 °C;

N-channel; see Figure 17

drain leakage current

gate leakage current

V_DS= -24 V; V_GS= 0 V; T_j= 25 °C;

P-channel

Ω

V_DS= 24 V; V_GS= 0 V; T_j= 25 °C;

N-channel

I_GSS

V_GS= 20 V; V_DS= 0 V; T_j= 25 °C;

N-channel

V_GS= 20 V; V_DS= 0 V; T_j= 25 °C;

P-channel

V_GS= -20 V; V_DS= 0 V; T_j= 25 °C;

P-channel

V_GS= -20 V; V_DS= 0 V; T_j= 25 °C;

N-channel

R_DSon

drain-source on-state

resistance

V_GS= -10 V; I_D= -1 A; T_j= 25 °C;

P-channel; see Figure 16;

see Figure 19

0.22

V_GS= 10 V; I_D= 2.2 A; T_j= 25 °C;

N-channel; see Figure 15;

see Figure 18

0.08

0.33

0.11

0.1

0.4

0.2

Ω

V_GS= -4.5 V; I_D= -0.5 A; T_j= 25 °C;

P-channel; see Figure 16;

see Figure 19

V_GS= 4.5 V; I_D= 1 A; N-channel;

see Figure 15; see Figure 18

I_DSon

on-state drain current

V_DS= 5 V; V_GS= 4.5 V; N-channel

V_DS= -5 V; V_GS= -4.5 V; P-channel

V_DS= -1 V; V_GS= -10 V; P-channel

V_DS= 1 V; V_GS= 10 V; N-channel

-1

-2.3

3.5

Dynamic characteristics

Q_G(tot)

total gate charge

I_D= 2.3 A; V_DS= 15 V; V_GS= 10 V;

T_j= 25 °C; N-channel;

see Figure 11

I_D= -2.3 A; V_DS= -15 V;

V_GS= -10 V; T_j= 25 °C; P-channel;

see Figure 12

PHC21025

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 04 — 17 March 2011

6 of 16

1...3 4 567 8 9...16

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