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PHC21025/T3 PDF预览

PHC21025/T3

更新时间： 2024-01-28 00:52:30
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
16页 240K
描述
TRANSISTOR 3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8, FET General Purpose Small Signal

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PHC21025/T3 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code：compliant风险等级：5.67
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：3.5 A最大漏源导通电阻：0.1 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：MS-012AA
JESD-30 代码：R-PDSO-G8元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL AND P-CHANNEL
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

PHC21025/T3 数据手册

 浏览型号PHC21025/T3的Datasheet PDF文件第4页浏览型号PHC21025/T3的Datasheet PDF文件第5页浏览型号PHC21025/T3的Datasheet PDF文件第6页浏览型号PHC21025/T3的Datasheet PDF文件第8页浏览型号PHC21025/T3的Datasheet PDF文件第9页浏览型号PHC21025/T3的Datasheet PDF文件第10页 
PHC21025  
NXP Semiconductors  
Complementary intermediate level FET  
Table 6.  
Symbol  
QGS  
Characteristics …continued  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
gate-source charge  
ID = 2.3 A; VDS = 15 V; VGS = 10 V;  
Tj = 25 °C; N-channel;  
see Figure 11  
-
1
-
nC  
ID = -2.3 A; VDS = -15 V;  
-
-
-
1
-
-
-
nC  
nC  
nC  
VGS = -10 V; Tj = 25 °C; P-channel;  
see Figure 12  
QGD  
gate-drain charge  
ID = -2.3 A; VDS = -15 V;  
VGS = -10 V; Tj = 25 °C; P-channel;  
see Figure 12  
3
ID = 2.3 A; VDS = 15 V; VGS = 10 V;  
Tj = 25 °C; N-channel;  
see Figure 11  
2.5  
Ciss  
Coss  
Crss  
gfs  
input capacitance  
output capacitance  
reverse transfer capacitance  
transfer conductance  
turn-off time  
VDS = 20 V; VGS = 0 V; f = 1 MHz;  
Tj = 25 °C; N-channel; see Figure 5  
-
250  
250  
140  
140  
50  
-
pF  
pF  
pF  
pF  
pF  
pF  
S
VDS = -20 V; VGS = 0 V; f = 1 MHz;  
Tj = 25 °C; P-channel; see Figure 6  
-
-
VDS = 20 V; VGS = 0 V; f = 1 MHz;  
Tj = 25 °C; N-channel; see Figure 5  
-
-
VDS = -20 V; VGS = 0 V; f = 1 MHz;  
Tj = 25 °C; P-channel; see Figure 6  
-
-
VDS = 20 V; VGS = 0 V; f = 1 MHz;  
Tj = 25 °C; N-channel; see Figure 5  
-
-
VDS = -20 V; VGS = 0 V; f = 1 MHz;  
-
50  
-
Tj = 25 °C; P-channel; see Figure 6  
VDS = -20 V; ID = -1 A; Tj = 25 °C;  
P-channel  
1
2
-
2
-
VDS = 20 V; ID = 2.2 A; Tj = 25 °C;  
4.5  
25  
-
S
N-channel  
toff  
VDS = 20 V; VGS = 10 V;  
140  
ns  
RG(ext) = 4.7 Ω; ID = 1 A; RL = 20 Ω;  
Tj = 25 °C; N-channel  
V
DS = -20 V; VGS = -10 V;  
-
-
50  
20  
140  
80  
ns  
ns  
RG(ext) = 4.7 Ω; ID = -1 A; RL = 20 Ω;  
Tj = 25 °C; P-channel  
ton  
turn-on time  
VDS = 20 V; VGS = 10 V;  
-
15  
40  
ns  
RG(ext) = 4.7 Ω; ID = 1 A; RL = 20 Ω;  
Tj = 25 °C; N-channel  
Source-drain diode  
VSD source-drain voltage  
IS = 1.25 A; VGS = 0 V; Tj = 25 °C;  
N-channel; see Figure 13  
-
-
-
-
1.2  
V
IS = -1.25 A; VGS = 0 V; Tj = 25 °C;  
P-channel; see Figure 14  
-
-1.6  
200  
V
trr  
reverse recovery time  
IS = -1.25 A; dIS/dt = 100 A/µs;  
VGS = 0 V; VDS = -25 V; Tj = 25 °C;  
P-channel  
150  
ns  
IS = 1.25 A; dIS/dt = -100 A/µs;  
VGS = 0 V; VDS = 25 V; Tj = 25 °C;  
N-channel  
-
35  
100  
ns  
PHC21025  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 04 — 17 March 2011  
7 of 16  
1...45678910...16

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