PHC21025

更新时间： 2024-02-28 05:52:18

品牌	Logo	应用领域
恩智浦 - NXP		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
16页	165K
描述
Complementary enhancement mode MOS transistors

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技术参数
数据手册

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PHC21025 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.6	Is Samacsys：	N
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e4
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL AND P-CHANNEL	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)	Base Number Matches：	1

PHC21025 数据手册

Philips Semiconductors

Product speciﬁcation

Complementary enhancement

mode MOS transistors

PHC21025

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per channel

V_DS

drain-source voltage (DC)

N-channel

P-channel

−

−30

±20

V_GSO

I_D

gate-source voltage (DC)

drain current (DC)

N-channel

open drain

T_s≤ 80 °C

−

3.5

P-channel

−2.3

I_DM

peak drain current

N-channel

note 1

−

−10

P-channel

P_tot

total power dissipation

T_s= 80 °C; note 2

°C

T_amb= 25 °C; note 3

T_amb= 25 °C; note 4

T_amb= 25 °C; note 5

1.3

+150

150

T_stg

T_j

storage temperature

−65

operating junction temperature

−

Source-drain diode

I_S

source current (DC)

T_s≤ 80 °C

N-channel

−

1.5

P-channel

−1.25

I_SM

peak pulsed source current

N-channel

note 1

−

P-channel

−5

Notes

1. Pulse width and duty cycle limited by maximum junction temperature.

2. Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same time.

3. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an R_{th a-tp}

(ambient to tie-point) of 27.5 K/W.

4. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an R_{th a-tp}

(ambient to tie-point) of 90 K/W.

5. Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with

an R_{th a-tp}(ambient to tie-point) of 90 K/W.

1997 Jun 20

1 234 5 6 7...16

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