生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.79 |
最大集电极电流 (IC): | 0.6 A | 基于收集器的最大容量: | 8 pF |
集电极-发射极最大电压: | 40 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 30 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | 最大关闭时间(toff): | 100 ns |
最大开启时间(吨): | 45 ns | VCEsat-Max: | 1.6 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PH2907AT/R | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | TO-92 | |
PH2907-T/R | NXP |
获取价格 |
TRANSISTOR 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Smal | |
PH2920 | NXP |
获取价格 |
N-channel enhancement mode field-effect transistor | |
PH2925U | NXP |
获取价格 |
N-channel TrenchMOS⑩ ultra low level FET | |
PH2925U | NEXPERIA |
获取价格 |
N-channel TrenchMOS ultra low level FETProduction | |
PH2925U,115 | NXP |
获取价格 |
N-channel TrenchMOS ultra low level FET SOIC 4-Pin | |
PH2931-135S | TE |
获取价格 |
Radar Pulsed Power Transistor 135W, 2.9-3.1 G | |
PH2931-20M | TE |
获取价格 |
Radar Pulsed Power Transistor, 20W,100ms Pulse, 10% Duty 2.9-3.1 GHz | |
PH2931-5M | TE |
获取价格 |
Radar Pulsed Power Transistor,5W,100ms Pulse, 10% Duty 2.9-3.1 GHz | |
PH2931-I3 | TE |
获取价格 |
Radar Pulsed Power Transistor, 135W, 20ms Pulse, 1% Duty 2.9 - 3.1 GHz |