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PH2925U PDF预览

PH2925U

更新时间: 2024-09-24 22:26:35
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管开关脉冲
页数 文件大小 规格书
12页 92K
描述
N-channel TrenchMOS⑩ ultra low level FET

PH2925U 数据手册

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PH2925U  
N-channel TrenchMOS™ ultra low level FET  
M3D748  
Rev. 02 — 08 April 2004  
Product data  
1. Product profile  
1.1 Description  
N-channel enhancement mode field-effect power transistor in a plastic package using  
TrenchMOS™ technology.  
1.2 Features  
Low thermal resistance  
Low threshold voltage  
SO8 equivalent area footprint  
Low on-state resistance.  
1.3 Applications  
DC-to-DC converters  
Portable appliances  
Switched-mode power supplies  
Notebook computers.  
1.4 Quick reference data  
VDS 25 V  
ID 100 A  
Ptot 62.5 W  
RDSon 2.9 mΩ  
2. Pinning information  
Table 1:  
Pin  
Pinning - SOT669 (LFPAK), simplified outline and symbol  
Description  
source (s)  
gate (g)  
Simplified outline  
Symbol  
1,2,3  
4
d
mb  
mb  
mounting base;  
connected to drain (d)  
g
s
MBB076  
1
2
3
4
Top view  
MBL286  
SOT669 (LFPAK)  

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