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PH20100S,115 PDF预览

PH20100S,115

更新时间: 2024-09-14 21:13:47
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
12页 166K
描述
PH20100S - N-channel TrenchMOS standard level FET SOIC 4-Pin

PH20100S,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:PLASTIC, LFPAK-4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.2雪崩能效等级(Eas):250 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):34.3 A
最大漏极电流 (ID):34.3 A最大漏源导通电阻:0.023 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-235
JESD-30 代码:R-PSSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):62.5 W最大脉冲漏极电流 (IDM):134 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PH20100S,115 数据手册

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PH20100S  
N-channel TrenchMOS standard level FET  
Rev. 03 — 2 February 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology. This product is designed and qualified for use in  
computing, communications, consumer and industrial applications only.  
1.2 Features and benefits  
„ Higher operating power due to low  
„ Simple gate drive required due to low  
thermal resistance  
gate charge current  
„ Low conduction losses due to low  
on-state resistance  
1.3 Applications  
„ DC-to-DC convertors  
„ Switched-mode power supplies  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
drain-source voltage Tj 25 °C; Tj 150 °C  
Min  
Typ  
Max Unit  
VDS  
ID  
-
-
-
-
100  
V
A
drain current  
Tmb = 25 °C; VGS = 10 V;  
see Figure 2; see Figure 1  
34.3  
Ptot  
total power  
dissipation  
Tmb = 25 °C  
-
-
-
62.5  
-
W
Dynamic characteristics  
QGD gate-drain charge  
VGS = 10 V; ID = 20 A;  
VDS = 50 V; Tj = 25 °C;  
see Figure 11  
8.9  
nC  
Static characteristics  
RDSon  
drain-source  
on-state resistance  
VGS = 10 V; ID = 10 A;  
Tj = 25 °C; see Figure 8;  
see Figure 9  
-
19  
23  
mΩ  
 
 
 
 
 

PH20100S,115 替代型号

型号 品牌 替代类型 描述 数据表
PSMN3R3-40YS NXP

类似代替

N-channel LFPAK 40 V 3.3 mΩ standard level MO
PSMN017-60YS NXP

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N-channel LFPAK 60 V 15.7 mΩ standard level M
PSMN8R5-60YS NXP

类似代替

N-channel LFPAK 60 V, 8 mΩ standard level MOS

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