Datasheet > PG12GXTS6

PG12GXTS6

更新时间： 2024-09-18 10:13:43

品牌	Logo	应用领域
KEC		二极管电视电子便携式
页数	文件大小	规格书
2页	397K
描述
TVS Diode Array for ESD Protection in Portable Electronics

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中文翻译

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PG12GXTS6 数据手册

PG12GXTS6

SEMICONDUCTOR

TVS Diode Array for ESD

TECHNICAL DATA

Protection in Portable Electronics

Protection in Portable Electronics Applications.

FEATURES

DIM MILLIMETERS

2.9+0.2

350 Watts peak pulse power (tp=8/20 s)

Transient protection for data lines to

IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)

IEC 61000-4-4(EFT) 40A(tp=5/50ns)

IEC 61000-4-5(Lightning) 15A(tp=8/20 s)

Unidirectional protection of five I/O lines.

Low clamping voltage.

1.6+0.2/-0.1

0.70+0.05

0.4 0.1

2.8+0.2/-0.3

1.9+0.2

0.95

0.16+0.05

0.00-0.10

0.25+0.25/-0.15

0.60

0.55

Low operating and leakage current.

Small package for use in portable electronics.

1. (TVS) D1

2. COMMON ANODE

3. (TVS) D2

APPLICATIONS

4. (TVS) D3

5. (TVS) D4

Cell phone handsets and accessories.

Cordless Phones.

6. (TVS) D5

Personal digital assistants (PDA’s)

Notebooks, desktops PC & servers.

Portable instrumentation.

Set-Top Bosx, DVD Player.

Digital Camera.

TS6

Marking

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

Lot No.

SYMBOL

RATING

350

UNIT

P_PK

I_PP

T_j

2GX

Peak Pulse Power (tp=8/20 s)

Peak Pulse Current (tp=8/20 s)

Operating Temperature

-55 150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

SYMBOL

V_RWM

V_BR

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

I_t=1mA

13.3

I_R

V_RWM=12V

I_PP=5A, tp=8/20 s

V_C

C_J

Clamping Voltage

I_PP=15A, tp=8/20 s

V_R=0V, f=1MHz

Junction Capacitance

135

150

Between I/O Pins and GND

2003. 7. 10

Revision No : 0

1/2

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