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PG12NSSMC PDF预览

PG12NSSMC

更新时间: 2024-11-07 10:13:43
品牌 Logo 应用领域
KEC 二极管电视
页数 文件大小 规格书
2页 437K
描述
Single Line TVS Diode for ESD Protection

PG12NSSMC 技术参数

生命周期:Not Recommended包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.72最大击穿电压:14.7 V
最小击穿电压:13.3 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-C2最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:12 V
表面贴装:YES技术:AVALANCHE
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

PG12NSSMC 数据手册

 浏览型号PG12NSSMC的Datasheet PDF文件第2页 
SEMICONDUCTOR  
PG12NSSMC  
Single Line TVS Diode for ESD Protection  
TECHNICAL DATA  
Protection of Voltage Sensitive Components.  
FEATURES  
Low profile package.  
Transient protection for data line to  
2
1
A
APPLICATIONS  
Devices for Unidirectional Applications.  
Automotive Controller.  
D
DIM MILLIMETERS  
Notebooks, Desktops, & Servers.  
A
B
C
D
E
6.60 ~ 7.11  
5.59 ~ 6.22  
2.92 ~ 3.07  
7.75 ~ 8.13  
0.76 ~ 1.52  
G
H
E
E
F
2.00 ~ 2.62  
0.15 ~ 0.31  
0.10 ~ 0.20  
G
H
1. ANODE  
2. CATHODE  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
SYMBOL  
RATING  
1500  
UNIT  
W
SMC  
PPK  
IPP  
Tj  
Peak Pulse Power (tp=10/1000 s)  
Peak Pulse Current (tp=10/1000 s)  
Operating Temperature  
75.4  
A
-55 150  
-55 150  
Tstg  
Storage Temperature  
* Notes) : (1) Derated above Ta=25 per power derating curve.  
Marking  
(2) Mounted on 0.31 0.31 (8.0 8.0 ) copper pads to each terminal.  
(3) Mounted on minimum recommened pad lay out  
Type Name  
T12  
Lot No.  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Reverse Stand-Off Voltage  
Reverse Breakdown Voltage  
Reverse Leakage Current  
Clamping Voltage  
SYMBOL  
VRWM  
VBR  
TEST CONDITION  
-
MIN.  
TYP.  
MAX.  
12  
UNIT  
V
-
-
-
-
-
It=1.0mA  
13.3  
14.7  
5.0  
V
IR  
VRWM=12V  
-
-
A
VC  
19.9  
V
IPP=75.4A, tp=10/1000 s  
2007. 6. 8  
Revision No : 1  
1/2  

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