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PG05GBUSC

更新时间: 2024-11-02 10:13:43
品牌 Logo 应用领域
KEC 二极管电视电子便携式
页数 文件大小 规格书
2页 33K
描述
Single Line TVS Diode for ESD Protection in Portable Electronics

PG05GBUSC 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.68
最小击穿电压:6 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-G2最大非重复峰值反向功率耗散:350 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:5 V表面贴装:YES
技术:AVALANCHE端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

PG05GBUSC 数据手册

 浏览型号PG05GBUSC的Datasheet PDF文件第2页 
PG05GBUSC  
SEMICONDUCTOR  
Single Line TVS Diode for ESD  
Protection in Portable Electronics  
TECHNICAL DATA  
Protection in Portable Electronics Applications.  
G
B
1
FEATURES  
· 350 Watts peak pulse power (tp=8/20μs)  
· Transient protection for data lines to  
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)  
IEC 61000-4-4(EFT) 40A(tp=5/50ns)  
IEC 61000-4-5(Lightning) 24A(tp=8/20μs)  
· Bidirectional Type Pin Configuration Structure.  
· Small package for use in portable electronics.  
· Suitable replacement for Multi-Layer Varistors in ESD protection applications.  
· Protects on I/O or power line.  
H
2
J
D
C
I
DIM  
A
B
MILLIMETERS  
_
2.50+0.1  
_
1.25+0.05  
_
+
0.90 0.05  
C
D
E
0.30+0.06/-0.04  
M
M
_
+
1.70 0.05  
F
MIN 0.17  
_
· Low clamping voltage.  
+
0.126 0.03  
G
H
I
· Low leakage current.  
1. ANODE  
2. ANODE  
0~0.1  
1.0 MAX  
_
0.15+0.05  
J
_
0.4+0.05  
K
L
2
+4/-2  
APPLICATIONS  
M
4~6  
· Cell phone handsets and accessories.  
· Microprocessor based equipment.  
· Personal digital assistants (PDA’s)  
· Notebooks, desktops, & servers.  
· Portable instrumentation.  
USC  
· Pagers peripherals.  
Marking  
MAXIMUM RATING (Ta=25)  
Lot No.  
CHARACTERISTIC  
SYMBOL  
RATING  
350  
UNIT  
W
2
1
PPK  
IPP  
Tj  
Peak Pulse Power (tp=8/20μs)  
Peak Pulse Current (tp=8/20μs)  
Operating Temperature  
5G  
24  
A
-55150  
-55150  
Type Name  
Tstg  
Storage Temperature  
2
1
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Reverse Stand-Off Voltage  
Reverse Breakdown Voltage  
Reverse Leakage Current  
Clamping Voltage  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
5
UNIT  
V
VRWM  
VBR  
IR  
-
-
6
-
-
-
-
-
-
It=1mA  
VRWM=5V  
-
V
10  
μA  
V
VC  
IPP=24A, tp=8/20μs  
-
14.5  
200  
CJ  
VR=0V, f=1MHz  
Junction Capacitance  
-
pF  
2008 .9 .11  
Revision No : 1  
1/2  

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