Datasheet > PG05GXUS6

PG05GXUS6

更新时间： 2024-09-27 10:13:43

品牌	Logo	应用领域
KEC		二极管电视电子便携式
页数	文件大小	规格书
2页	33K
描述
TVS Diode Array for ESD Protection in Portable Electronics

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中文翻译

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PG05GXUS6 数据手册

PG05GXUS6

SEMICONDUCTOR

TVS Diode Array for ESD

TECHNICAL DATA

Protection in Portable Electronics

Protection in Portable Electronics Applications.

FEATURES

· 100 Watts peak pulse power (tp=8/20μs)

· Transient protection for data lines to

IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact).

IEC 61000-4-4(EFT) 40A (tp=5/50㎱)

IEC 61000-4-5(Lightning) 8A (tp=8/20μs)

· Protects five I/O lines.

DIM MILLIMETERS

2.00+0.20

1.3+0.1

2.1+0.1

1.25+0.1

0.65

0.2+0.10/-0.05

0-0.1

0.9+0.1

0.15+0.1/-0.05

· Low clamping voltage.

· Low operating and leakage current.

· Small package for use in portable electronics.

1. D1

2. COMMON ANODE

3. D2

4. D3

5. D4

6. D5

APPLICATIONS

· Cell phone handsets and accessories.

· Cordless phones.

· Personal digital assistants (PDA’s)

· Notebooks, desktops, & servers.

· Portable instrumentation.

· Set-Top Box, DVD Player.

· Digital Camera.

US6

Marking

Lot No.

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

SYMBOL

RATING

100

UNIT

Type Name

P_PK

I_PP

T_j

Peak Pulse Power (tp=8/20μs)

Peak Pulse Current (tp=8/20μs)

Operating Temperature

-55∼ 150

℃

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_RWM

V_BR

I_R

I_t=1mA

V_RWM=5V

μA

I_PP=1A, tp=8/20μs

8.5

12.5

V_C

C_J

Clamping Voltage

I_PP=8A, tp=8/20μs

V_R=0V, f=1MHz

Junction Capacitance

130

Between I/O Pins and GND

2008. 9. 11

Revision No : 2

1/2

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