Datasheet > PF5301-TO-92-3L-ROHS

PF5301-TO-92-3L-ROHS

更新时间： 2024-01-05 21:56:59

品牌	Logo	应用领域
凌特 - Linear		/
页数	文件大小	规格书
1页	206K
描述
Transistor,

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PF5301-TO-92-3L-ROHS 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	FET 技术：	JUNCTION
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.3 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

PF5301-TO-92-3L-ROHS 数据手册

LS5301, PF5301

VERY HIGH INPUT IMPEDANCE

N-CHANNEL JFET

FEATURES

REPLACEMENT FOR LF5301, PF5301

HIGH INPUT INPEDANCE

HIGH GAIN

I_G= 0.100 pA

g_fs= 70 µS

LS SERIES

PF SERIES

ABSOLUTE MAXIMUM RATINGS¹

@ 25 °C (unless otherwise stated), TA=25°C

Maximum Temperatures

Storage Temperature (TO-72)

Storage Temperature (TO-92)

Maximum Power Dissipation²

Continuous Power Dissipation), TA=25°C

Maximum Currents

TO-72

TOP VIEW

-55 to 175°C

-55 to 150°C

300mW

50mA

Gate Current

Maximum Voltages

Gate to Drain

-30V

Gate to Source

COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

BV_GSS

V_GS(off)

I_GSS

CHARACTERISTIC

MIN TYP MAX UNIT

CONDITIONS

Gate to Source Breakdown Voltage

Gate to Source Cutoff Voltage

Gate Leakage Current

-30

V_DS= 0V, I_D= -1µA

-0.6

-3.0

-1

V_DS= 10V, I_D= 1nA

V_DS= 0V, V_GS= -15V

V_DG= 6V, I_D= 5µA

I_G

Gate Operating Current

-0.04

I_DSS

Drain to Source Saturation Current

Forward Transconductance

Input Capacitance

500

300

µA

µS

V_DS= 10V, V_GS= 0V

V_DS= 10V, V_GS= 0V, f = 1kHz

g_fs

C_iss

V_DS= 10V, V_GS= 0V, f = 1MHz

C_rss

Reverse Transfer Capacitance

Equivalent Noise Voltage

1.5

e_n

150 nV/√Hz V_DG= 10V, I_D= 50µA, f = 100Hz

NOTES

1. Absolute maximum ratings are limiting values above which serviceability may be impaired.

2. Derate PF series 2.8mW/° C when TA>25° C. Derate LS series 2.0mW°C when TA>25° C

3. All MIN/TYP/MAX limits are absolute numbers. Negative signs indicated electrical polarity only.

Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any

infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent

rights of Linear Integrated Systems.

Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing

high-quality discrete components. Expertise brought to LIS is based on processes and products developed

at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,

a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,

co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.

Linear Integrated Systems

•

4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Doc 201141 06/19/12 Rev#A10 ECN#LS5301 PF5301

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