Datasheet > PF608BA

PF608BA

更新时间： 2024-11-19 17:15:35

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	196K
描述
TO-220F

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中文翻译

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数据手册

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PF608BA 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

PF608BA

TO-220F

NIKO-SEM

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

40V

R_DS(ON)

I_D

58A

6mΩ

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

1. GATE

2. DRAIN

3. SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ° C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

Gate-Source Voltage

V_GS

±20

T_C= 25 ° C

Continuous Drain Current

I_D

T_C= 100 ° C

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

150

L = 0.1mH

T_C= 25 ° C

T_C= 100 ° C

E_AS

115.2

P_D

Power Dissipation

Junction & Storage Temperature Range

T_J, T_stg

-55 to 150

° C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JA

TYPICAL

MAXIMUM

UNITS

° C / W

Junction-to-Ambient

62.5

Junction-to-Case

R_JC

¹Pulse width limited by maximum junction temperature.

H-9-5

REV 1.0

12 3 4

中文翻译

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