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PF5G3EA PDF预览

PF5G3EA

更新时间: 2024-11-22 17:15:23
品牌 Logo 应用领域
尼克森微 - NIKOSEM /
页数 文件大小 规格书
4页 269K
描述
TO-220F

PF5G3EA 数据手册

 浏览型号PF5G3EA的Datasheet PDF文件第2页浏览型号PF5G3EA的Datasheet PDF文件第3页浏览型号PF5G3EA的Datasheet PDF文件第4页 
P-Channel Enhancement  
Mode Field Effect Transistor  
PF5G3EA  
TO-220F  
Halogen-Free & Lead-Free  
NIKO-SEM  
PRODUCT SUMMARY  
V(BR)DSS  
-30V  
RDS(ON)  
ID  
-56A  
8mΩ  
Features  
• Pb−Free, Halogen Free and RoHS compliant.  
• Low RDS(on) to Minimize Conduction Losses.  
• Ohmic Region Good RDS(on) Ratio.  
• Optimized Gate Charge to Minimize Switching Losses.  
Products Integrated ESD diode with ESD Protected.  
1. GATE  
2. DRAIN  
3. SOURCE  
Applications  
Protection Circuits Applications.  
Logic/Load Switch Circuits Applications.  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMITS  
-30  
UNITS  
V
V
Gate-Source Voltage  
VGS  
±20  
TC = 25 °C  
TC = 100°C  
-56  
Continuous Drain Current2,3  
ID  
-35  
A
Pulsed Drain Current1  
Avalanche Current  
Avalanche Energy  
IDM  
IAS  
-168  
-71  
L = 0.1mH  
TC = 25 °C  
TC = 100°C  
EAS  
252  
mJ  
W
43  
PD  
Power Dissipation  
17  
Junction & Storage Temperature Range  
TJ, Tstg  
-55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNITS  
°C / W  
Junction-to-Case  
2.9  
Junction-to-Ambient  
62.5  
RJA  
1Pulse width limited by maximum junction temperature.  
2Limited only by maximum temperature allowed.  
3Package limitation current is -55A.  
REV1.0  
K-10-1  
1

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