Datasheet > PF5G3EA

PF5G3EA

更新时间： 2024-10-01 17:15:23

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	269K
描述
TO-220F

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中文翻译

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数据手册

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PF5G3EA 数据手册

P-Channel Enhancement

Mode Field Effect Transistor

PF5G3EA

TO-220F

Halogen-Free & Lead-Free

NIKO-SEM

PRODUCT SUMMARY

V_(BR)DSS

-30V

R_DS(ON)

I_D

-56A

8mΩ

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

• Products Integrated ESD diode with ESD Protected.

1. GATE

2. DRAIN

3. SOURCE

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

-30

UNITS

Gate-Source Voltage

V_GS

±20

T_C= 25 °C

T_C= 100°C

-56

Continuous Drain Current^2,3

I_D

-35

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

-168

-71

L = 0.1mH

T_C= 25 °C

T_C= 100°C

E_AS

252

P_D

Power Dissipation

Junction & Storage Temperature Range

T_J, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNITS

°C / W

Junction-to-Case

2.9

Junction-to-Ambient

62.5

R_JA

¹Pulse width limited by maximum junction temperature.

²Limited only by maximum temperature allowed.

³Package limitation current is -55A.

REV1.0

K-10-1

12 3 4

中文翻译

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