Datasheet > PESD5V0U1BLD,315

PESD5V0U1BLD,315

更新时间： 2024-11-14 15:47:47

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
11页	150K
描述
PESD5V0U1BLD - Ultra low capacitance bidirectional ESD protection diode DFN 2-Pin

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中文翻译

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技术参数
数据手册

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PESD5V0U1BLD,315 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	DFN
针数：	2	Reach Compliance Code：	compliant
风险等级：	8.62	Is Samacsys：	N
Base Number Matches：	1

PESD5V0U1BLD,315 数据手册

PESD5V0U1BLD

Ultra low capacitance bidirectional ESD protection diode

Rev. 2 — 27 July 2011

Product data sheet

1. Product profile

1.1 General description

Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode

designed to protect one signal line from the damage caused by ESD and other transients.

The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD)

plastic package with visible and solderable side pads.

1.2 Features and benefits

 Bidirectional ESD protection of one line  AEC-Q101 qualified

 Ultra small SMD plastic package

 Solderable side pads

 ESD protection up to 10 kV

 IEC 61000-4-2; level 4 (ESD)

 Ultra low leakage current: I_RM= 5 nA

 Package height typ. 0.37 mm

 Ultra low diode capacitance C_d= 2.9 pF

1.3 Applications

 Computers and peripherals

 Audio and video equipment

 Cellular handsets and accessories

 High-speed data lines

 Communication systems

 Portable electronics

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

C_d

reverse standoff voltage

diode capacitance

f = 1 MHz; V_R= 0 V

2.9

3.5

2. Pinning information

Table 2.

Pinning

Description

Simplified outline

Graphic symbol

[1]

cathode (diode 1)

cathode (diode 2)

sym045

Transparent

top view

[1] The marking bar indicates pin 1.

12 3 4 5 6 7...11

中文翻译

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