Datasheet > PESD2ETHD-Q

PESD2ETHD-Q

更新时间： 2024-11-19 11:10:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	252K
描述
Ultra low capacitance double rail-to-rail ESD protection diodeProduction

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PESD2ETHD-Q 数据手册

PESD2ETHD-Q

Ultra low capacitance double rail-to-rail ESD protection diode

24 May 2023

Product data sheet

1. General description

Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection diode in a small

SOT457 Surface-Mounted Device (SMD) plastic package. The device is designed to protect two

high-speed data lines or high-frequency signal lines from the damage caused by ESD and other

transients. The device integrates two ultra low capacitance rail-to-rail diodes and one additional

ESD protection diode to ensure signal line protection even if no supply voltage is available.

2. Features and benefits

•

ESD protection of two high-speed data lines

•

Ultra low capacitance: C_D= 1.3 pF

ISO 10605 (330 pF, 2 kΩ) up to 15 kV

ESD protection up to 8 kV

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

100BASE-T1 / OPEN Allicance BroadR-Reach automotive Ethernet

Low-Voltage Differential Signaling (LVDS) automotive

USB 2.0 automotive

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

5.5

Zener diode

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

[1]

[2]

Per channel

C_d

1.3

1.5

[1] Measured from pin 5 to ground.

[2] Measured from pin 4 or 6 to ground.

12 3 4 5 6 7...12

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