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PESD24VS1ULD PDF预览

PESD24VS1ULD

更新时间: 2024-11-03 11:15:55
品牌 Logo 应用领域
安世 - NEXPERIA 局域网光电二极管
页数 文件大小 规格书
11页 259K
描述
Unidirectional ESD protection diodeProduction

PESD24VS1ULD 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-N2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.6最大击穿电压:27.5 V
最小击穿电压:26.5 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-N2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:150 W
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大重复峰值反向电压:24 V表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED

PESD24VS1ULD 数据手册

 浏览型号PESD24VS1ULD的Datasheet PDF文件第2页浏览型号PESD24VS1ULD的Datasheet PDF文件第3页浏览型号PESD24VS1ULD的Datasheet PDF文件第4页浏览型号PESD24VS1ULD的Datasheet PDF文件第5页浏览型号PESD24VS1ULD的Datasheet PDF文件第6页浏览型号PESD24VS1ULD的Datasheet PDF文件第7页 
PESD24VS1ULD  
Unidirectional ESD protection diode  
22 August 2018  
Product data sheet  
1. General description  
Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal  
line from the damage caused by ESD and other transients. The device is housed in a SOD882D  
leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable  
side pads.  
2. Features and benefits  
ESD protection of one line  
ESD protection up to 23 kV  
Ultra small SMD plastic package  
IEC 61000-4-2; level 4 (ESD)  
Solderable side pads  
IEC 61000-4-5 (surge); IPP = 3A  
Package height typ. 0.37 mm  
Max. peak pulse power: PPPM = 150 W  
Low clamping voltage: VCL = 70 V  
Max. peak pulse power: PPPM = 150 W  
Ultra low leakage current: IRM < 1 nA  
AEC-Q101 qualified  
3. Application information  
Computers and peripherals  
Communication systems  
Audio and video equipment  
Portable electronics  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff  
voltage  
Tamb = 25 °C  
-
-
24  
V
Cd  
diode capacitance  
f = 1 MHz; VR = 0 V; Tamb = 25 °C  
-
23  
50  
pF  
 
 
 
 

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