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PESD24VS2UAT PDF预览

PESD24VS2UAT

更新时间: 2024-12-02 15:19:47
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
11页 236K
描述
Double ESD protection diode in SOT23 packageProduction

PESD24VS2UAT 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.74Is Samacsys:N
最大击穿电压:27.5 V最小击穿电压:26.5 V
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:160 W
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL参考标准:IEC-60134; IEC-61000-4-2; IEC-61000-4-5
最大重复峰值反向电压:24 V表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

PESD24VS2UAT 数据手册

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PESD24VS2UAT  
Double ESD protection diode in SOT23 package  
24 July 2023  
Product data sheet  
1. General description  
Unidirectional double ESD protection diode in common cathode configuration in a small SOT23  
Surface-Mounted Device (SMD) plastic package, designed to protect up to two data lines against  
damage from ElectroStatic Discharge (ESD) and other transients.  
2. Features and benefits  
Unidirectional ESD protection of up to two lines  
Common-cathode configuration  
Max. peak pulse power: PPPM = 160 W at tp = 8/20 µs  
Ultra-low reverse leakage current: IRM = 1 nA  
ESD protection: 23 kV  
IEC 61000-4-2; level 4 (ESD)  
IEC 61000-4-5 (surge); IPPM = 3 A at tp = 8/20 µs  
3. Applications  
Computers and peripherals  
Communication systems  
Audio and video equipment  
Data lines  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff  
voltage  
Tj = 25 °C  
[1]  
[1]  
-
-
24  
V
Cd  
diode capacitance  
f = 1 MHz; VR = 0 V; Tj = 25 °C  
-
23  
50  
pF  
[1] Measured across either pins 1 and 3 or pins 2 and 3.  
 
 
 
 
 

PESD24VS2UAT 替代型号

型号 品牌 替代类型 描述 数据表
MMBZ27VALT3G ONSEMI

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