Datasheet > PESD18VF1BL-Q

PESD18VF1BL-Q

更新时间： 2024-11-03 11:13:31

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	302K
描述
Ultra low capacitance bidirectional ESD protection diodeProduction

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中文翻译

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PESD18VF1BL-Q 数据手册

PESD18VF1BL-Q

Ultra low capacitance bidirectional ESD protection diode

18 January 2022

Product data sheet

1. General description

Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2

(SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect

one signal line from the damage caused by ESD and other transients.

2. Features and benefits

•

Ultra low diode capacitance C_d= 0.35 pF

•

High reverse standoff voltage V_RWM= 18 V

Very small voltage dependency of the capacitance

ESD protection up to ±10 kV according to IEC 61000-4-2, level 4

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

NFC antenna protection

Protection of high-speed data lines

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

0.28

0.35

0.5

5. Pinning information

Table 2. Pinning information

Symbol

Description

Simplified outline

Graphic symbol

cathode (diode 1)

cathode (diode 2)

Transparent

top view

sym045

DFN1006-2 (SOD882)

12 3 4 5 6 7...10

中文翻译

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