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PESD1CAN,215 PDF预览

PESD1CAN,215

更新时间: 2024-11-30 21:21:39
品牌 Logo 应用领域
恩智浦 - NXP 局域网光电二极管
页数 文件大小 规格书
12页 82K
描述
PESD1CAN - CAN bus ESD protection diode TO-236 3-Pin

PESD1CAN,215 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-236
包装说明:PLASTIC, SMD, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:4.14
最大击穿电压:30.3 V最小击穿电压:25.4 V
击穿电压标称值:27.8 V最大钳位电压:70 V
配置:COMPLEX二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:200 W
元件数量:2端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:BIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:24 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

PESD1CAN,215 数据手册

 浏览型号PESD1CAN,215的Datasheet PDF文件第2页浏览型号PESD1CAN,215的Datasheet PDF文件第3页浏览型号PESD1CAN,215的Datasheet PDF文件第4页浏览型号PESD1CAN,215的Datasheet PDF文件第5页浏览型号PESD1CAN,215的Datasheet PDF文件第6页浏览型号PESD1CAN,215的Datasheet PDF文件第7页 
PESD1CAN  
CAN bus ESD protection diode  
Rev. 04 — 15 February 2008  
Product data sheet  
1. Product profile  
1.1 General description  
PESD1CAN in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic  
package designed to protect two automotive Controller Area Network (CAN) bus lines  
from the damage caused by ElectroStatic Discharge (ESD) and other transients.  
1.2 Features  
I Due to the integrated diode structure only one small SOT23 package is needed to  
protect two CAN bus lines  
I Max. peak pulse power: PPP = 200 W at tp = 8/20 µs  
I Low clamping voltage: VCL = 40 V at IPP = 1 A  
I Ultra low leakage current: IRM < 1 nA  
I Typ. diode capacitance matching: Cd/Cd = 0.1 %  
I ESD protection up to 23 kV  
I IEC 61000-4-2, level 4 (ESD)  
I IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 µs  
I Small SMD plastic package  
1.3 Applications  
I CAN bus protection  
I Automotive applications  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter  
Per diode  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
Cd  
reverse standoff voltage  
diode capacitance  
-
-
-
24  
17  
V
f = 1 MHz; VR = 0 V  
11  
pF  
 
 
 
 
 

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