Datasheet > PESD1IVN24L-Q

PESD1IVN24L-Q

更新时间： 2024-12-01 11:13:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	193K
描述
Bidirectional ESD protection diodeProduction

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PESD1IVN24L-Q 数据手册

PESD1IVN24L-Q

Bidirectional ESD protection diode

7 March 2023

Product data sheet

1. General description

ESD protection device in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device

(SMD) plastic package, designed to protect automotive in-vehicle network bus lines from the

damage caused by ElectroStatic discharge (ESD) and other transients.

2. Features and benefits

•

Reverse stand-off voltage: V_RWM= 24 V

•

Low clamping voltage: V_CL= 33 V at I_PP= 3.5 A

ESD protection up to 30 kV (IEC 61000-4-2)

ESD protection up to 30 kV (ISO 10605: C = 330 pF, R = 330 Ω)

Ultra low leakage current: I_RM= 1 nA

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

ESD protection for in-vehicle network lines in automotive environments

•

CAN

LIN

FlexRay

SENT

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

I_PPM

V_CL

rated peak pulse

current

t_p= 8/20 µs

[1]

3.5

clamping voltage

I_PPM= 3.5 A; t_p= 8/20 µs; T_amb= 25 °C [1]

[1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

12 3 4 5 6 7...11

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