Datasheet > PESD1LINT/R

PESD1LINT/R

更新时间： 2024-12-01 19:53:27

品牌	Logo	应用领域
恩智浦 - NXP		二极管
页数	文件大小	规格书
11页	85K
描述
TRANSIENT SUPPRESSOR DIODE,DUAL,BIDIRECTIONAL,CENTER-TAPPED,24V V(RWM),SOD-323

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中文翻译

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技术参数
数据手册

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PESD1LINT/R 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.84
击穿电压标称值：	27.8 V	最大钳位电压：	70 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	极性：	BIDIRECTIONAL
最大重复峰值反向电压：	24 V	子类别：	Transient Suppressors
表面贴装：	YES	Base Number Matches：	1

PESD1LINT/R 数据手册

PESD1LIN

LIN bus ESD protection diode

Rev. 02 — 12 November 2008

Product data sheet

1. Product proﬁle

1.1 General description

PESD1LIN in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic

package designed to protect one automotive Local Interconnect Network (LIN) bus line

from the damage caused by ElectroStatic Discharge (ESD) and other transients.

1.2 Features

I ESD protection of one automotive LIN bus line

I Asymmetrical diode conﬁguration ensures an optimized ElectroMagnetic

Immunity (EMI) of a LIN Electronic Control Unit (ECU)

I Due to the integrated diode structure only one very small SOD323 package is needed

I Max. peak pulse power: P_PP= 160 W at t_p= 8/20 µs

I Low clamping voltage: V_CL= 40 V at I_PP= 1 A

I Ultra low leakage current: I_RM< 1 nA

I ESD protection of up to 23 kV

I IEC 61000-4-2, level 4 (ESD)

I IEC 61000-4-5 (surge); I_PP= 3 A at t_p= 8/20 µs

1.3 Applications

I LIN bus protection

I Automotive applications

1.4 Quick reference data

Table 1.

Quick reference data

T_amb= 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff voltage

PESD1LIN (15 V)

PESD1LIN (24 V)

diode capacitance

C_d

V_R= 0 V;

f = 1 MHz

12 3 4 5 6 7...11

中文翻译

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