Datasheet > PESD20VY1BBSF

PESD20VY1BBSF

更新时间： 2024-12-02 11:15:23

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
7页	151K
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PESD20VY1BBSF 数据手册

PESD20VY1BBSF

Extremely low clamping bidirectional ESD protection diode

6 October 2022

Short data sheet

1. General description

Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the

TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless ultra small

Surface-Mounted Device (SMD) package designed to protect one signal line from the damage

caused by ESD and other transients.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

V_RWM= 20 V device

Very low diode capacitance C_d= 0.7 pF typical

Extremely low clamping and trigger voltage to protect sensitive I/Os

Extremely low inductance protection path to ground

ESD protection up to ±30 kV according to IEC 61000-4-2

IEC 61000-4-5 (surge): I_PP= 25 A peak pulse (average measured)

Ultra small, very low inductance SMD package

3. Applications

•

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

USB3.2 and USB2.0 data lines, SD-card data lines

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

-20

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

0.7

0.84

12 3 4 5 6 7

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