Datasheet > PESD20VV1BSF

PESD20VV1BSF

更新时间： 2024-12-02 15:18:55

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	211K
描述
Very low capacitance high voltage bidirectional ESD protection diodeProduction

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PESD20VV1BSF 数据手册

PESD20VV1BSF

Very low capacitance high voltage bidirectional ESD

protection diode

4 December 2023

Product data sheet

1. General description

Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, designed to

protect one signal line from the damage caused by ESD and other transients. The device is housed

in a leadless ultra small DSN0603-2 (SOD962) Surface-Mounted Device (SMD) package.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

Ultra small leadless package with a height of 0.3 mm

IEC 61000-4-5 (surge): I_PP= 8.2 A peak pulse (average measured)

High reverse standoff voltage: V_RWM= 20 V

Low capacitance: C_d= 11.2 pF (typical)

ESD protection up to 30 kV

3. Applications

ESD protection for Type C SBU and CC lines and other high voltage applications in Consumer,

Mobile and Computer environment.

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

I_PPM

V_CL

rated peak pulse

current

t_p= 8/20 μs

[1]

6.5

clamping voltage

I_PPM= 6.5 A; t_p= 8/20 µs; T_amb= 25 °C [1]

[1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

12 3 4 5 6 7...11

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