Datasheet > PESD16VV1BSF

PESD16VV1BSF

更新时间： 2024-11-03 11:15:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	190K
描述
Extremely symmetrical bidirectional ESD protection diodeProduction

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技术参数
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PESD16VV1BSF 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.8
湿度敏感等级：	1	Base Number Matches：	1

PESD16VV1BSF 数据手册

PESD16VV1BSF

Extremely symmetrical bidirectional ESD protection diode

3 March 2021

Product data sheet

1. General description

Extremely symmetrical bidirectional ElectroStatic Discharge (ESD) protection diode. This device is

housed in a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package

designed to protect one signal line from the damage caused by ESD and other transients.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

Extremely symmetrical layout

Very low diode capacitance C_d= 6.5 pF maximum values

Low clamping to protect sensitive I/Os

Low inductance protection path to ground

ESD protection up to ±12 kV according to IEC 61000-4-2

Ultra small SMD package

3. Applications

•

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

t_p= 8/20 μs

5.7

6.5

1.3

I_PPM

rated peak pulse

current

[1] [2]

[1] According to IEC 61000-4-5 and IEC 61643-321.

[2] In positive and negative direction.

12 3 4 5 6 7...10

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