Datasheet > PE6A4BA

PE6A4BA

更新时间： 2024-11-09 17:15:31

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
5页	227K
描述
PDFN 3x3

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中文翻译

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PE6A4BA 数据手册

PE6A4BA

PDFN 3x3P

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

40V

R_DS(ON)

I_D

32A

12mΩ

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

G. GATE

D. DRAIN

S. SOURCE

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

100% UIS Tested

100% Rg Tested

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

±20

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current⁴

Pulsed Drain Current¹

Continuous Drain Current⁴

I_D

I_DM

I_D

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Avalanche Current

Avalanche Energy

I_AS

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

E_AS

26.5

10.6

3.1

Power Dissipation

Power Dissipation³

P_D

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

H-2-5

REV1.0

12 3 4 5

中文翻译

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