Datasheet > PE6W2EA

PE6W2EA

更新时间： 2024-11-27 17:15:55

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
6页	415K
描述
PDFN 3x3

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中文翻译

获取价格

数据手册

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PE6W2EA 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

PE6W2EA

PDFN 3x3P

NIKO-SEM

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

30V

R_DS(ON)

I_D

24A

18mΩ

Features

ESD Protected

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

• Products Integrated ESD diode with ESD Protected up to 2KV.

G. GATE

D. DRAIN

S. SOURCE

Applications

• Protection Circuits Applications.

• Computer for DC to DC Converters Applications.

100% UIS Tested

100% Rg Tested

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

±20

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current⁴

Pulsed Drain Current¹

Continuous Drain Current

I_D

I_DM

I_D

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

7.8

6.2

Avalanche Current⁵

Avalanche Energy⁵

I_AS

21.4

4.6

L = 0.02mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

E_AS

Power Dissipation

Power Dissipation³

P_D

7.7

P_D

1.3

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

L-48-4

REV1.0

12 3 4 5 6

中文翻译

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