Datasheet > PE6B0SA

PE6B0SA

更新时间： 2024-11-27 17:15:43

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
5页	452K
描述
PDFN 3x3

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中文翻译

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数据手册

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PE6B0SA 数据手册

PE6B0SA

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

PDFN 3x3P

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

30V

R_DS(ON)

I_D

5mΩ

42A

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

• Products Integrated Schottky Diode.

G : GATE

D : DRAIN

S : SOURCE

Applications

• Computer for DC to DC Converters Applications.

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL

Drain-Source Voltage

LIMITS

UNITS

V_DS

V_GS

±20

Gate-Source Voltage

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current³

I_D

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

E_AS

17.8

Power Dissipation⁴

P_D

2.7

1.7

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

K-27-3

REV1.3

12 3 4 5

中文翻译

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