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PE6R8DX PDF预览

PE6R8DX

更新时间: 2024-11-09 17:15:35
品牌 Logo 应用领域
尼克森微 - NIKOSEM 光电二极管
页数 文件大小 规格书
5页 324K
描述
PDFN 3x3

PE6R8DX 数据手册

 浏览型号PE6R8DX的Datasheet PDF文件第2页浏览型号PE6R8DX的Datasheet PDF文件第3页浏览型号PE6R8DX的Datasheet PDF文件第4页浏览型号PE6R8DX的Datasheet PDF文件第5页 
Dual N-Channel Enhancement Mode  
Field Effect Transistor  
PE6R8DX  
NIKO-SEM  
PDFN 3x3P  
Halogen-Free & Lead-Free  
PRODUCT SUMMARY  
V(BR)DSS  
40V  
RDS(ON)  
ID  
24A  
15.5mΩ  
Features  
• Pb−Free, Halogen Free and RoHS compliant.  
• Low RDS(on) to Minimize Conduction Losses.  
• Ohmic Region Good RDS(on) Ratio.  
• Optimized Gate Charge to Minimize Switching Losses.  
D1 D1 D2 D2  
Applications  
Protection Circuits Applications.  
Protable Devices for Battery PACK Applications.  
G : GATE  
D : DRAIN  
S : SOURCE  
#1  
S1 G1 S2  
G2  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMITS  
UNITS  
40  
V
V
Gate-Source Voltage  
VGS  
±20  
TC = 25 °C  
TC = 100 °C  
TA = 25 °C  
TA = 70 °C  
24  
15  
Continuous Drain Current  
ID  
6
A
4.8  
Pulsed Drain Current1  
Avalanche Current  
Avalanche Energy  
IDM  
IAS  
45  
21  
L = 0.1mH  
TC = 25 °C  
TC = 100 °C  
TA = 25 °C  
TA = 70 °C  
EAS  
22  
mJ  
W
28  
11  
1.7  
Power Dissipation  
PD  
1
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJA  
TYPICAL  
MAXIMUM  
75  
4.5  
UNITS  
Junction-to-Ambient2  
°C / W  
Junction-to-Case  
RJC  
1Pulse width limited by maximum junction temperature.  
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air  
environment with TA =25°C  
I-46-2  
REV1.0  
1

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