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PDTC144ETT/R PDF预览

PDTC144ETT/R

更新时间: 2024-09-16 13:12:15
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
8页 69K
描述
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal

PDTC144ETT/R 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.1其他特性:BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC):0.1 A基于收集器的最大容量:3.5 pF
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):230 MHzVCEsat-Max:0.3 V
Base Number Matches:1

PDTC144ETT/R 数据手册

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DISCRETE SEMICONDUCTORS  
DATA SHEET  
PDTC144EE  
NPN resistor-equipped transistor  
1998 Jul 16  
Product specification  
Supersedes data of 1997 Jul 03  
File under Discrete Semiconductors, SC04  

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