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PDTC143TTT/R PDF预览

PDTC143TTT/R

更新时间: 2024-11-01 13:12:15
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
14页 150K
描述
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal

PDTC143TTT/R 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.08其他特性:BUILT-IN BIAS RESISTORS
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):200
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PDTC143TTT/R 数据手册

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DISCRETE SEMICONDUCTORS  
DATA SHEET  
PDTC143E series  
NPN resistor-equipped transistors;  
R1 = 4.7 kΩ, R2 = 4.7 kΩ  
Product data sheet  
2004 Aug 05  
Supersedes data of 2004 Mar 18  

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