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PDTC143XQB-Q PDF预览

PDTC143XQB-Q

更新时间: 2024-09-16 11:10:47
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
20页 358K
描述
50 V, 100 mA NPN resistor-equipped transistorsProduction

PDTC143XQB-Q 数据手册

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PDTC143X/123J/143Z/114Y/124XQB-  
Q series  
50 V, 100 mA NPN resistor-equipped transistors  
Rev. 1 — 1 October 2021  
Product data sheet  
1. General description  
100 mA NPN Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015)  
leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.  
Table 1. Product overview  
Type number  
R1  
kΩ  
4.7  
2.2  
4.7  
10  
R2  
kΩ  
10  
47  
47  
47  
47  
Package  
JEDEC  
MO-340BA  
PNP complement:  
Nexperia  
PDTC143XQB-Q  
PDTC123JQB-Q  
PDTC143ZQB-Q  
PDTC114YQB-Q  
PDTC124XQB-Q  
SOT8015  
PDTA143XQB-Q  
PDTA123JQB-Q  
PDTA143ZQB-Q  
PDTA114YQB-Q  
PDTA124XQB-Q  
22  
2. Features and benefits  
100 mA output current capability  
Built-in resistors  
Simplifies circuit design  
Reduces component count  
Reduces pick and place costs  
Low package height of 0.5 mm  
Suitable for Automatic Optical Inspection (AOI) of solder joint  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
Digital applications  
Cost saving alternative for BC847-Q series in digital applications  
Controlling IC inputs  
Switching loads  
4. Quick reference data  
Table 2. Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol  
VCEO  
IO  
Parameter  
Conditions  
Min  
Typ  
Max  
50  
Unit  
V
collector-emitter voltage  
output current  
open base  
-
-
-
-
100  
mA  
 
 
 
 

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