Datasheet > PDTB113

PDTB113

更新时间： 2024-11-26 01:04:03

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
23页	3676K
描述
50 V, 500 mA PNP resistor-equipped transistors

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中文翻译

获取价格

数据手册

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PDTB113 数据手册

PDTB113/123/143/114EQA

series

50 V, 500 mA PNP resistor-equipped transistors

Rev. 1 — 30 March 2016

Product data sheet

1. Product profile

1.1 General description

PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3

(SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable

side pads.

Table 1.

Product overview

Type number

PDTB113EQA

PDTB123EQA

PDTB143EQA

PDTB114EQA

Package Nexperia NPN complement

1 k

DFN1010D-3

(SOT1215)

PDTD113EQA

PDTD123EQA

PDTD143EQA

PDTD114EQA

2.2 k

4.7 k

10 k

2.2 k

4.7 k

10 k

1.2 Features and benefits

 500 mA output current capability

 Built-in bias resistors

 Reduced pick and place costs

 Low package height of 0.37 mm

  10% resistor ratio tolerance

 Suitable for Automatic Optical

Inspection (AOI) of solder joint

 Simplifies circuit design

 AEC-Q101 qualified

 Reduces component count

1.3 Applications

 Digital applications

 Controlling IC inputs

 Switching loads

 Cost saving alternative for

BC807/BC817 series in digital

applications

1.4 Quick reference data

Table 2.

Symbol

V_CEO

Quick reference data

Parameter

Conditions

Min

Typ

Max

50

Unit

collector-emitter voltage

output current

open base

I_O

500

12 3 4 5 6 7...23

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