Datasheet > PC28F00AP33TFA

PC28F00AP33TFA

更新时间： 2024-11-22 00:58:27

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
92页	987K
描述
Micron Parallel NOR Flash Embedded Memory (P33-65nm)

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PC28F00AP33TFA 数据手册

512Mb, 1Gb, 2Gb: P33-65nm

Features

Micron Parallel NOR Flash Embedded

Memory (P33-65nm)

JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA

PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA

JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA

PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA,

PC28F00BP33EFA

• Security

Features

• High performance

– One-time programmable register: 64 OTP bits,

programmed with unique information from Mi-

cron; 2112 OTP bits available for customer pro-

gramming

• Easy BGA package features

– 95ns initial access for 512Mb, 1Gb Easy BGA

– 100ns initial access for 2Gb Easy BGA

– 25ns 16-word asychronous page read mode

– 52 MHz (Easy BGA) with zero WAIT states and

17ns clock-to-data output synchronous burst

read mode

– 4-, 8-, 16-, and continuous word options for burst

mode

• TSOP package features

– Absolute write protection: V_PP= V_SS

– Power-transition erase/program lockout

– Individual zero-latency block locking

– Individual block lock-down

– Password access

• Software

– 25μs (TYP) program suspend

– 25μs (TYP) erase suspend

– 105ns initial access for 512Mb, 1Gb TSOP

• Both Easy BGA and TSOP package features

– Buffered enhanced factory programming (BEFP)

at 2 MB/s (TYP) using a 512-word buffer

– 3.0V buffered programming at 1.46 MB/s (TYP)

using a 512-word buffer

– Flash Data Integrator optimized

– Basic command set and extended function Inter-

face (EFI) command set compatible

– Common flash interface

• Density and Packaging

– 56-lead TSOP package (512Mb, 1Gb)

– 64-ball Easy BGA package (512Mb, 1Gb, 2Gb)

– 16-bit wide data bus

• Quality and reliabilty

– JESD47 compliant

• Architecture

– MLC: highest density at lowest cost

– Symmetrically blocked architecture (512Mb, 1Gb,

2Gb)

– Asymmetrically blocked architecture (512Mb,

1Gb); four 32KB parameter blocks: top or bottom

configuration

– Operating temperature: –40°C to +85°C

– Minimum 100,000 ERASE cycles per block

– 65nm process technology

– 128KB main blocks

– Blank check to verify an erased block

• Voltage and power

– V_CC(core) voltage: 2.3–3.6V

– V_CCQ(I/O) voltage: 2.3–3.6V

– Standy current: 70µA (TYP) for 512Mb; 75µA

(TYP) for 1Gb

– 52 MHz continuous synchronous read current:

21mA (TYP), 24mA (MAX)

PDF: 09005aef845667b8

p33_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. C 12/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...92

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与PC28F00AP33TFA相关器件

型号	品牌	获取价格	描述	数据表
PC28F00BM29EWHA	MICRON	获取价格	Parallel NOR Flash Embedded Memory
PC28F00BP30EF	MICRON	获取价格	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
PC28F00BP30EFA	MICRON	获取价格	NumonyxÂ® Axcellâ¢ P30-65nm Flash Memory
PC28F00BP33EFA	MICRON	获取价格	Micron Parallel NOR Flash Embedded Memory (P33-65nm)
PC28F064M29EWBA	MICRON	获取价格	(x8/x16), 3V, Single Bit Per Cell, Page Read, Parallel NOR Flash Memory
PC28F064M29EWBX	MICRON	获取价格	Parallel NOR Flash Embedded Memory
PC28F064M29EWHA	MICRON	获取价格	(x8/x16), 3V, Single Bit Per Cell, Page Read, Parallel NOR Flash Memory
PC28F064M29EWHX	MICRON	获取价格	Parallel NOR Flash Embedded Memory
PC28F064M29EWLA	MICRON	获取价格	(x8/x16), 3V, Single Bit Per Cell, Page Read, Parallel NOR Flash Memory
PC28F064M29EWLX	MICRON	获取价格	Parallel NOR Flash Embedded Memory

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