Datasheet > 存储 > 闪存> PC28F128J3C-150

PC28F128J3C-150

更新时间： 2024-11-07 22:44:31

品牌	Logo	应用领域
英特尔 - INTEL		闪存存储内存集成电路
页数	文件大小	规格书
72页	909K
描述
Intel StrataFlash Memory (J3)

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

PC28F128J3C-150 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	BGA	包装说明：	LEAD FREE, BGA-64
针数：	64	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.1.A	HTS代码：	8542.32.00.51
风险等级：	5.71	最长访问时间：	150 ns
备用内存宽度：	8	JESD-30 代码：	R-PBGA-B64
长度：	13 mm	内存密度：	134217728 bit
内存集成电路类型：	FLASH	内存宽度：	16
功能数量：	1	端子数量：	64
字数：	8388608 words	字数代码：	8000000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	8MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	TBGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, THIN PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
编程电压：	2.7 V	认证状态：	Not Qualified
座面最大高度：	1.2 mm	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	40	类型：	NOR TYPE
宽度：	10 mm	Base Number Matches：	1

PC28F128J3C-150 数据手册

Intel StrataFlash^®Memory (J3)

256-Mbit (x8/x16)

Datasheet

Product Features

■ Performance

■ Architecture

—110/115/120/150 ns Initial Access Speed

—Multi-Level Cell Technology: High

Density at Low Cost

—125 ns Initial Access Speed (256 Mbit

density only)

—High-Density Symmetrical 128-Kbyte

Blocks

—25 ns Asynchronous Page mode Reads

—256 Mbit (256 Blocks) (0.18µm only)

—128 Mbit (128 Blocks)

—64 Mbit (64 Blocks)

—30 ns Asynchronous Page mode Reads

(256Mbit density only)

—32-Byte Write Buffer

—32 Mbit (32 Blocks)

—6.8 µs per byte effective

■ Quality and Reliability

—Operating Temperature:

-40 °C to +85 °C

programming time

■ Software

—Program and Erase suspend support

—100K Minimum Erase Cycles per Block

—0.18 µm ETOX™ VII Process (J3C)

—Flash Data Integrator (FDI), Common

Flash Interface (CFI) Compatible

■ Security

—0.25 µm ETOX™ VI Process (J3A)

■ Packaging and Voltage

—128-bit Protection Register

—64-bit Unique Device Identifier

—64-bit User Programmable OTP Cells

—56-Lead TSOP Package

—64-Ball Intel Easy BGA Package

—Lead-free packages available

—48-Ball Intel VF BGA Package (32 and

—Absolute Protection with V_PEN= GND

—Individual Block Locking

—Block Erase/Program Lockout during

Power Transitions

64 Mbit) (x16 only)

—V_CC2.7 V to 3.6 V

—V_CCQ= 2.7 V to 3.6 V

Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash^®Memory (J3)

device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-

Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit-

per-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed

interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future

devices.

Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, the J3 device takes

advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components

are ideal for code and data applications where high density and low cost are required. Examples include

networking, telecommunications, digital set top boxes, audio recording, and digital imaging.

By applying FlashFile™ memory family pinouts, J3 memory components allow easy design migrations from

existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash^®

memory (28F640J5 and 28F320J5) devices.

J3 memory components deliver a new generation of forward-compatible software support. By using the

Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density

upgrades and optimized write capabilities of future Intel StrataFlash^®memory devices. Manufactured on Intel^®

0.18 micron ETOX™ VII (J3C) and 0.25 micron ETOX™ VI (J3A) process technology, the J3 memory device

provides the highest levels of quality and reliability.

Notice: This document contains information on new products in production. The specifications are

subject to change without notice. Verify with your local Intel sales office that you have the latest

datasheet before finalizing a design.

Order Number: 290667-021

March 2005

12 3 4 5 6 7...72

中文翻译

下载PDF

PC28F128J3C-150 替代型号

型号	品牌	替代类型	描述	数据表
RC28F128J3C-150	INTEL	功能相似	Intel StrataFlash Memory (J3)

与PC28F128J3C-150相关器件

型号	品牌	获取价格	描述	数据表
PC28F128J3D-75	NUMONYX	获取价格	Numonyx Embedded Flash Memory
PC28F128J3D75A	NUMONYX	获取价格	Flash, 8MX16, 75ns, PBGA64, LEAD FREE, ESBGA-64
PC28F128J3D75B	NUMONYX	获取价格	Flash, 8MX16, 75ns, PBGA64, LEAD FREE, ESBGA-64
PC28F128J3D75D	NUMONYX	获取价格	Flash, 8MX16, 75ns, PBGA64, LEAD FREE, ESBGA-64
PC28F128J3D75F	NUMONYX	获取价格	Flash, 8MX16, 75ns, PBGA64, LEAD FREE, ESBGA-64
PC28F128J3F75	NUMONYX	获取价格	Flash, 8MX16, 75ns, PBGA64, LEAD FREE, ESBGA-64
PC28F128J3F75A	MICRON	获取价格	NumonyxÂ® Embedded Flash Memory (J3 65nm) Sin
PC28F128J3F75B	MICRON	获取价格	32Mb, 64Mb, 128Mb, 65nm Embedded Parallel NOR Flash Memory, Single Bit Per Cell (SBC)
PC28F128J3F75D	MICRON	获取价格	32Mb, 64Mb, 128Mb, 65nm Embedded Parallel NOR Flash Memory, Single Bit Per Cell (SBC)
PC28F128M29EWHF	MICRON	获取价格	Parallel NOR Flash Embedded Memory

与PC28F128J3C-150相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

21
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

19
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

44
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

38

产品中心

服务支持

精选活动

关于我们

帮助中心

PC28F128J3C-150

PC28F128J3C-150 技术参数

PC28F128J3C-150 数据手册

PC28F128J3C-150 替代型号

与PC28F128J3C-150相关器件

与PC28F128J3C-150相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

PC28F128J3C-150

PC28F128J3C-150 技术参数

PC28F128J3C-150 数据手册

PC28F128J3C-150 替代型号

与PC28F128J3C-150相关器件

与PC28F128J3C-150相关文章

您还可以找

您在本页遇到什么问题？