Datasheet > PC28F064M29EWHA

PC28F064M29EWHA

更新时间： 2024-11-22 14:59:03

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
87页	1118K
描述
(x8/x16), 3V, Single Bit Per Cell, Page Read, Parallel NOR Flash Memory

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数据手册

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PC28F064M29EWHA 数据手册

32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash

Features

Parallel NOR Flash Embedded Memory

JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX

PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX

JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX

• V_PP/WP# pin protection

– V_PPHvoltage on V_PPto accelerate programming

Features

• Supply voltage

– V_CC= 2.7–3.6V (program, erase, read)

– V_CCQ= 1.65–3.6V (I/O buffers)

• Asynchronous random or page read

– Page size: 8 words or 16 bytes

performance

– Protects highest/lowest block (H/L uniform) or

top/bottom two blocks (T/B boot)

• Software protection

– Volatile protection

– Nonvolatile protection

– Page access: 25ns

– Random access: 60ns (BGA); 70ns (TSOP)

• Buffer program: 256-word MAX program buffer

• Program time

– Password protection

– Password access

• Extended memory block

– 0.56µs per byte (1.8 MB/s TYP when using 256-

word buffer size in buffer program without V_PPH

– 0.31µs per byte (3.2 MB/s TYP when using 256-

– 128-word (256-byte) block for permanent secure

identification

– Program or lock implemented at the factory or by

the customer

• Low-power consumption: Standby mode

• JESD47H-compliant

– 100,000 minimum ERASE cycles per block

– Data retention: 20 years (TYP)

• 65nm single-bit cell process technology

• Packages (JEDEC-standard)

– 56-pin TSOP (128Mb, 64Mb)

– 48-pin TSOP (64Mb, 32Mb)

– 64-ball FBGA (128Mb, 64Mb)

– 48-ball BGA (64Mb, 32Mb)

• Green packages available

– RoHS-compliant

)

word buffer size in buffer program with V_PPH

• Memory organization

)

– 32Mb: 64 main blocks, 64KB each, or eight 8KB

boot blocks (top or bottom) and 63 main blocks,

64KB each

– 64Mb: 128 main blocks, 64KB each, or eight 8KB

boot blocks (top or bottom) and 127 main blocks,

64 KB each

– 128Mb: 128 main blocks, 128KB each

• Program/erase controller

– Embedded byte/word program algorithms

• Program/erase suspend and resume capability

– READ operation on any block during a PRO-

GRAM SUSPEND operation

– Halogen-free

– READ or PROGRAM operation on one block dur-

ing an ERASE SUSPEND operation on another

block

• Operating temperature

– Ambient: –40°C to +85°C

• BLANK CHECK operation to verify an erased block

• Unlock bypass, block erase, chip erase, and write to

buffer capability

– Fast buffered/batch programming

– Fast block and chip erase

PDF: 09005aef84dc44a7

m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...87

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与PC28F064M29EWHA相关器件

型号	品牌	获取价格	描述	数据表
PC28F064M29EWHX	MICRON	获取价格	Parallel NOR Flash Embedded Memory
PC28F064M29EWLA	MICRON	获取价格	(x8/x16), 3V, Single Bit Per Cell, Page Read, Parallel NOR Flash Memory
PC28F064M29EWLX	MICRON	获取价格	Parallel NOR Flash Embedded Memory
PC28F064M29EWTA	MICRON	获取价格	(x8/x16), 3V, Single Bit Per Cell, Page Read, Parallel NOR Flash Memory
PC28F064M29EWTX	MICRON	获取价格	Parallel NOR Flash Embedded Memory
PC28F064M29EWTY	MICRON	获取价格	Parallel NOR Flash Embedded Memory
PC28F064M29EWXX	MICRON	获取价格	Parallel NOR Flash Embedded Memory
PC28F128G18FE	MICRON	获取价格	128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
PC28F128G18FF	MICRON	获取价格	128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
PC28F128J3A-110	INTEL	获取价格	Intel StrataFlash Memory (J3)

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