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PBYR1080BT/R PDF预览

PBYR1080BT/R

更新时间: 2024-09-17 13:12:15
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管局域网
页数 文件大小 规格书
5页 42K
描述
10A, 80V, SILICON, RECTIFIER DIODE

PBYR1080BT/R 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.84Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.95 V
JESD-30 代码:R-PSSO-G2最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:80 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:SINGLEBase Number Matches:1

PBYR1080BT/R 数据手册

 浏览型号PBYR1080BT/R的Datasheet PDF文件第2页浏览型号PBYR1080BT/R的Datasheet PDF文件第3页浏览型号PBYR1080BT/R的Datasheet PDF文件第4页浏览型号PBYR1080BT/R的Datasheet PDF文件第5页 
Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR10100 series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Reverse surge capability  
• High thermal cycling performance  
• Low thermal resistance  
VR = 60 V/ 80 V/ 100 V  
IF(AV) = 10 A  
k
1
a
2
VF 0.7 V  
GENERAL DESCRIPTION  
PINNING  
SOD59 (TO220AC)  
Schottky rectifier diodes in a plastic  
envelope. Intended for use as  
output rectifiers in low voltage, high  
frequency switched mode power  
supplies.  
PIN  
DESCRIPTION  
cathode  
anode  
cathode  
tab  
1
2
The PBYR10100 series is supplied  
in the conventional leaded SOD59  
(TO220AC) package.  
tab  
1
2
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
80  
UNIT  
PBYR10  
60  
60  
60  
60  
100  
100  
100  
100  
VRRM  
VRWM  
Peak repetitive reverse  
-
-
80  
80  
V
V
voltage  
Working peak reverse  
voltage  
Continuous reverse voltage  
VR  
Tmb 139 ˚C  
-
-
80  
10  
V
A
IF(AV)  
Average rectified forward  
current  
square wave; δ = 0.5; Tmb 133 ˚C  
IFRM  
IFSM  
Repetitive peak forward  
current  
square wave; δ = 0.5; Tmb 133 ˚C  
-
20  
A
Non-repetitive peak forward t = 10 ms  
current  
-
-
135  
150  
A
A
t = 8.3 ms  
sinusoidal; Tj = 125 ˚C prior to  
surge; with reapplied VRRM(max)  
pulse width and repetition rate  
limited by Tj max  
IRRM  
Tj  
Peak repetitive reverse  
surge current  
-
-
1
A
Operating junction  
temperature  
150  
175  
˚C  
˚C  
Tstg  
Storage temperature  
- 65  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction  
to mounting base  
Thermal resistance junction in free air  
to ambient  
-
-
-
2
-
K/W  
K/W  
60  
March 1998  
1
Rev 1.200  

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