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PBYR1540CTX PDF预览

PBYR1540CTX

更新时间: 2024-11-18 22:44:31
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管局域网
页数 文件大小 规格书
6页 48K
描述
Rectifier diodes Schottky barrier

PBYR1540CTX 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.84 VJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:110 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最大输出电流:7.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:40 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

PBYR1540CTX 数据手册

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Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR1545CTF, PBYR1545CTX series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Reverse surge capability  
• High thermal cycling performance  
• Isolated mounting tab  
VR = 40 V/ 45 V  
a1  
1
a2  
3
IO(AV) = 15 A  
k
2
VF 0.57V  
GENERAL DESCRIPTION  
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended  
for use as output rectifiers in low voltage, high frequency switched mode power supplies.  
The PBYR1545CTF series is supplied in the SOT186 package.  
The PBYR1545CTX series is supplied in the SOT186A package.  
PINNING  
SOT186  
SOT186A  
PIN  
DESCRIPTION  
anode 1 (a)  
cathode (k)  
case  
case  
1
2
3
anode 2 (a)  
isolated  
1
2 3  
1
2 3  
tab  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
PBYR15  
PBYR15  
40CTF  
40CTX  
40  
45CTF  
45CTX  
45  
VRRM  
VRWM  
Peak repetitive reverse  
-
-
V
V
voltage  
Working peak reverse  
voltage  
Continuous reverse voltage  
40  
40  
45  
45  
VR  
T
hs 89 ˚C  
-
-
V
A
IO(AV)  
Average rectified output  
current (both diodes  
conducting)  
square wave; δ = 0.5;  
15  
15  
Ths 93 ˚C  
IFRM  
IFSM  
Repetitive peak forward  
current per diode  
square wave; δ = 0.5;  
-
A
Ths 93 ˚C  
Non-repetitive peak forward t = 10 ms  
-
-
100  
110  
A
A
current per diode  
t = 8.3 ms  
sinusoidal; Tj = 125 ˚C prior to  
surge; with reapplied VRRM(max)  
pulse width and repetition rate  
limited by Tj max  
IRRM  
Tj  
Peak repetitive reverse  
surge current per diode  
Operating junction  
temperature  
-
-
1
A
150  
175  
˚C  
˚C  
Tstg  
Storage temperature  
- 65  
October 1998  
1
Rev 1.300  

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