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PBYR1545CTB PDF预览

PBYR1545CTB

更新时间: 2024-11-18 22:44:31
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管
页数 文件大小 规格书
6页 47K
描述
Rectifier diodes Schottky barrier

PBYR1545CTB 技术参数

生命周期:Obsolete包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.81其他特性:FAST SWITCHING
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:2
最大输出电流:7.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:45 V
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:SINGLE
Base Number Matches:1

PBYR1545CTB 数据手册

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Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR1545CT, PBYR1545CTB series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Reverse surge capability  
• High thermal cycling performance  
• Low thermal resistance  
VR = 40 V/ 45 V  
a1  
1
a2  
3
IO(AV) = 15 A  
VF 0.57 V  
k
2
GENERAL DESCRIPTION  
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting  
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.  
The PBYR1545CT series is supplied in the SOT78 conventional leaded package.  
The PBYR1545CTB series is supplied in the SOT404 surface mounting package.  
PINNING  
SOT78 (TO220AB)  
SOT404  
PIN  
DESCRIPTION  
anode 1 (a)  
cathode (k) 1  
tab  
tab  
1
2
2
3
anode 2 (a)  
cathode (k)  
1
3
1 2 3  
tab  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
PBYR15  
PBYR15  
40CT  
45CT  
45CTB  
45  
40CTB  
VRRM  
VRWM  
Peak repetitive reverse  
-
-
40  
V
V
voltage  
Working peak reverse  
voltage  
Continuous reverse voltage  
40  
40  
45  
45  
VR  
T
mb 107 ˚C  
-
-
V
A
IO(AV)  
Average rectified forward  
current (both diodes  
conducting)  
square wave; δ = 0.5;  
15  
15  
Tmb 128 ˚C  
IFRM  
IFSM  
Repetitive peak forward  
current (per diode)  
square wave; δ = 0.5;  
-
A
Tmb 128 ˚C  
Non-repetitive peak forward t = 10 ms  
-
-
135  
150  
A
A
current per diode  
t = 8.3 ms  
sinusoidal; Tj = 125 ˚C prior to  
surge; with reapplied VRRM(max)  
pulse width and repetition rate  
limited by Tj max  
IRRM  
Tj  
Peak repetitive reverse  
surge current per diode  
Operating junction  
temperature  
-
-
1
A
150  
175  
˚C  
˚C  
Tstg  
Storage temperature  
- 65  
1. It is not possible to make connection to pin 2 of the SOT404 package.  
October 1998  
1
Rev 1.300  

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