Datasheet > PBSS4350X,146

PBSS4350X,146

更新时间： 2024-02-04 11:16:46

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	117K
描述
PBSS4350X - 50 V, 3 A NPN low VCEsat (BISS) transistor SOT-89 3-Pin

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技术参数
数据手册

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PBSS4350X,146 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	SOT-89
针数：	3	Reach Compliance Code：	compliant
风险等级：	8.35	Is Samacsys：	N
Base Number Matches：	1

PBSS4350X,146 数据手册

Philips Semiconductors

Product speciﬁcation

50 V, 3 A

NPN low V_CEsat(BISS) transistor

PBSS4350X

FEATURES

QUICK REFERENCE DATA

• SOT89 (SC-62) package

SYMBOL

PARAMETER

MAX. UNIT

• Low collector-emitter saturation voltage V_CEsat

• High collector current capability: I_Cand I_CM

• Higher efficiency leading to less heat generation

• Reduced printed-circuit board requirements.

V_CEO

I_C

collector-emitter voltage

collector current (DC)

peak collector current

equivalent on-resistance

I_CM

R_CEsat

130

mΩ

PINNING

APPLICATIONS

• Power management

– DC/DC converters

– Supply line switching

– Battery charger

DESCRIPTION

emitter

collector

base

– LCD backlighting.

• Peripheral drivers

– Driver in low supply voltage applications (e.g. lamps

and LEDs).

– Inductive load driver (e.g. relays,

buzzers and motors).

DESCRIPTION

NPN low V_CEsattransistor in a SOT89 plastic package.

PNP complement: PBSS5350X.

sym042

MARKING

TYPE NUMBER

PBSS4350X

MARKING CODE

Fig.1 Simplified outline (SOT89) and symbol.

S43

2004 Nov 04

123 4 5 6 7...12

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