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PBSS4350Z PDF预览

PBSS4350Z

更新时间: 2024-11-21 11:13:15
品牌 Logo 应用领域
安世 - NEXPERIA PC开关光电二极管晶体管
页数 文件大小 规格书
12页 221K
描述
50 V low VCEsat NPN transistorProduction

PBSS4350Z 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.65
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:563455Samacsys Pin Count:4
Samacsys Part Category:TransistorSamacsys Package Category:SOT223 (3-Pin)
Samacsys Footprint Name:SOT223 (SC-73)Samacsys Released Date:2016-12-13 11:13:55
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

PBSS4350Z 数据手册

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PBSS4350Z  
50 V low VCEsat NPN transistor  
26 June 2018  
Product data sheet  
1. General description  
NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z.  
2. Features and benefits  
Low collector-emitter saturation voltage  
High collector current capability: IC and ICM  
High collector current gain (hFE ) at high IC  
Higher efficiency leading to less heat generation  
Reduced PCB area requirements compared to DPAK.  
AEC-Q101 qualified  
3. Applications  
Power management  
DC/DC converters  
Supply line switching  
Battery charger  
Linear voltage regulation (LDO).  
Peripheral drivers  
Driver in low supply voltage applications, e.g. lamps, LEDs  
Inductive load driver, e.g. relays, buzzers, motors.  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
50  
V
IC  
collector current  
-
-
3
A
A
ICM  
peak collector current single pulse; tp ≤ 1 ms  
-
-
5
hFE  
RCEsat  
DC current gain  
VCE = 2 V; IC = 500 mA; Tamb = 25 °C  
IC = 2 A; IB = 200 mA; Tamb = 25 °C  
[1]  
[1]  
200  
-
-
-
collector-emitter  
110  
145  
mΩ  
saturation resistance  
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02  
 
 
 
 
 

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