Datasheet > PBSS4350Z-Q

PBSS4350Z-Q

更新时间： 2024-11-21 15:19:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	224K
描述
50 V low VCEsat NPN transistorProduction

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PBSS4350Z-Q 数据手册

PBSS4350Z-Q

50 V low VCEsat NPN transistor

19 September 2023

Product data sheet

1. General description

NPN low V_CEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD)

plastic package.

PNP complement: PBSS5350Z-Q

2. Features and benefits

•

Low collector-emitter saturation voltage

•

High collector current capability: I_Cand I_CM

High collector current gain (h_FE) at high I_C

Higher efficiency leading to less heat generation

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Power management

•

DC/DC converters

Supply line switching

Battery charger

Linear voltage regulation (LDO)

•

Peripheral drivers

•

Driver in low supply voltage applications, for example lamps, LEDs

Inductive load driver, for example relays, buzzers, motors

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

I_CM

h_FE

peak collector current single pulse; t_p≤ 1 ms

DC current gain

V_CE= 2 V; I_C= 500 mA; pulsed; t_p≤

200

300 µs; δ ≤ 0.02; T_amb= 25 °C

R_CEsat

collector-emitter

saturation resistance

I_C= 2 A; I_B= 200 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

110

145

mΩ

12 3 4 5 6 7...10

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