Datasheet > PBSS4360Z

PBSS4360Z

更新时间： 2023-09-03 20:33:53

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	710K
描述
60 V, 3 A NPN low VCEsat (BISS) transistorProduction

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PBSS4360Z 数据手册

PBSS4360Z

60 V, 3 A NPN low VCEsat (BISS) transistor

26 February 2014

Product data sheet

1. General description

NPN low V_CEsatBreakthrough In Small Signal (BISS) transistor in a medium power

SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS5360Z.

2. Features and benefits

Low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High energy efficiency due to less heat generation

AEC-Q101 qualified

•

3. Applications

DC-to-DC conversion

Supply line switching

Battery charger

LCD backlighting

Driver in low supply voltage applications (e.g. lamps and LEDs)

Inductive load driver (e.g. relays, buzzers and motors)

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

I_CM

peak collector current t_p≤ 1 ms; single pulse

R_CEsat

collector-emitter

I_C= 2 A; I_B= 200 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02; T_amb= 25 °C

140

mΩ

saturation resistance

12 3 4 5 6 7...14

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