Datasheet > PBLS2023D,165

PBLS2023D,165

更新时间： 2024-11-12 19:53:51

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	109K
描述
SMALL SIGNAL TRANSISTOR

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技术参数
数据手册

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PBLS2023D,165 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.72	Base Number Matches：	1

PBLS2023D,165 数据手册

PBLS2023D

20 V, 1.8 A PNP BISS loadswitch

Rev. 02 — 6 September 2009

Product data sheet

1. Product proﬁle

1.1 General description

PNP low V_CEsatBreakthrough In Small Signal (BISS) transistor and NPN Resistor-

Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)

plastic package.

1.2 Features

I Low V_CEsat(BISS) and resistor-equipped transistor in one package

I Low threshold voltage (<1 V) compared to MOSFET

I Space-saving solution

I Reduction of component count

I AEC-Q101 qualiﬁed

1.3 Applications

I Supply line switches

I Battery charger switches

I High-side switches for LEDs, drivers and backlights

I Portable equipment

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

TR1; PNP low V_CEsattransistor

V_CEO

I_C

collector-emitter voltage

collector current

open base

−20

−1.8

−3

I_CM

peak collector current

single pulse;

t_p≤ 1 ms

[1]

R_CEsat

collector-emitter saturation I_C= −1.8 A;

117

mΩ

resistance

I_B= −100 mA

TR2; NPN resistor-equipped transistor

V_CEO

I_O

collector-emitter voltage

output current

open base

100

kΩ

bias resistor 1 (input)

bias resistor ratio

R2/R1

0.8

1.2

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

12 3 4 5 6 7...16

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