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P4KE8.2H03-2 PDF预览

P4KE8.2H03-2

更新时间: 2024-11-04 13:47:31
品牌 Logo 应用领域
RECTRON 局域网二极管
页数 文件大小 规格书
2页 221K
描述
Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-41

P4KE8.2H03-2 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:O-PALF-W2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.62Is Samacsys:N
最大击穿电压:9.02 V最小击穿电压:7.38 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
JESD-609代码:e3元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):265极性:UNIDIRECTIONAL
认证状态:Not Qualified表面贴装:NO
技术:AVALANCHE端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

P4KE8.2H03-2 数据手册

 浏览型号P4KE8.2H03-2的Datasheet PDF文件第2页 

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