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P4KE8.2H06 PDF预览

P4KE8.2H06

更新时间: 2024-11-04 13:47:31
品牌 Logo 应用领域
RECTRON 局域网二极管
页数 文件大小 规格书
2页 221K
描述
Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-41

P4KE8.2H06 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:O-PALF-W2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.62最大击穿电压:9.02 V
最小击穿电压:7.38 V外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2JESD-609代码:e3
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):265
极性:UNIDIRECTIONAL认证状态:Not Qualified
表面贴装:NO技术:AVALANCHE
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

P4KE8.2H06 数据手册

 浏览型号P4KE8.2H06的Datasheet PDF文件第2页 

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