Datasheet > P4KE8.2HE3/54

P4KE8.2HE3/54

更新时间： 2024-11-05 10:43:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	94K
描述
Trans Voltage Suppressor Diode, 400W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

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P4KE8.2HE3/54 数据手册

P4KE6.8 thru P4KE540A

Vishay General Semiconductor

TRANSZORB Transient Voltage Suppressors

FEATURES

• Glass passivated chip junction

• Availablein uni-directionaland bi-directional

• 400 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Solder dip 260 °C, 40 s

DO-204AL (DO-41)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

PRIMARY CHARACTERISTICS

V_BRuni-directional

6.8 V to 540 V

_BRbi-directional

6.8 V to 440 V

400 W

P_PPM

P_D

1.5 W

MECHANICAL DATA

Case: DO-204AL, molded epoxy over passivated chip

Molding compound meets UL 94 V-0 flammability

rating

_FSM(uni-directional only)

T_Jmax.

40 A

175 °C

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-direction use C or CA suffix (e.g. P4KE440CA).

Electrical characteristics apply in both directions.

suffix meets JESD 201 class 2 whisker test

Note: P4KE250 ~ P4KE540A and P4KE250C ~ P4KE440CA for

commercial grade only

Polarity: For uni-directional types the color band

denotes cathode end, no marking on bi-directional

types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

LIMIT

400

UNIT

Peak power dissipation with a 10/1000 µs waveform ⁽¹⁾(Fig. 1)

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

See next table

1.5

Power dissipation on infinite heatsink at T_L= 75 °C (Fig. 5)

Peak forward surge current, 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Maximum instantaneous forward voltage at 25 A for uni-directional only ⁽³⁾

Operating junction and storage temperature range

P_D

I_FSM

V_F

3.5/5.0

T_J, T_STG

- 55 to + 175

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(3) V_F= 3.5 V for P4KE220(A) and below; V_F= 5.0 V for P4KE250(A) and above

Document Number: 88365

Revision: 22-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5 6

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与P4KE8.2HE3/54相关器件

型号	品牌	获取价格	描述	数据表
P4KE8.2J	MIC	获取价格	PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPERSSOR
P4KE8.2-LF	SIRECT	获取价格	400W TRANSIENT VOLTAGE SUPPRESSOR
P4KE8.2M01	RECTRON	获取价格	Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-41
P4KE8.2M05	RECTRON	获取价格	Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-41
P4KE8.2PT	CHENMKO	获取价格	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
P4KE8.2T	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 400W, 7.02V V(RWM), Unidirectional, 1 Element, Silicon, DO
P4KE8.2-T	RECTRON	获取价格	Trans Voltage Suppressor Diode, 400W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, DO
P4KE8.2-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, DO
P4KE8.2-T3-LF	WTE	获取价格	Trans Voltage Suppressor Diode, 400W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, DO
P4KE8.2-TB-LF	WTE	获取价格	Trans Voltage Suppressor Diode, 400W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, DO

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