Datasheet > 存储 > SRAM> P4C163-35CMBLF

P4C163-35CMBLF

更新时间： 2024-11-21 04:55:11

品牌	Logo	应用领域
PYRAMID		/
页数	文件大小	规格书
12页	322K
描述
ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS

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中文翻译

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数据手册

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P4C163-35CMBLF 数据手册

P4C163/P4C163L

ULTRA HIGH SPEED 8K x 9

STATIC CMOS RAMS

FEATURES

Data Retention with 2.0V Supply, 10 µA Typical

Current (P4C163L Military)

Full CMOS, 6T Cell

High Speed (Equal Access and Cycle Times)

– 25/35ns (Commercial)

Common I/O

– 25/35/45ns (Military)

Fully TTL Compatible Inputs and Outputs

Low Power Operation (Commercial/Military)

Standard Pinout (JEDEC Approved)

– 28-Pin 300 mil DIP, SOJ

– 28-Pin 350 x 550 mil LCC

– 28-Pin CERPACK

Output Enable and Dual Chip Enable Control

Functions

Single 5V±10% Power Supply

DESCRIPTION

Accesstimesasfastas25nanosecondsareavailable,per-

mittinggreatlyenhancedsystemoperatingspeeds.CMOS

is used to reduce power consumption in both active and

standbymodes.

TheP4C163andP4C163Lare73,728-bitultrahigh-speed

staticRAMsorganizedas8Kx9.TheCMOSmemoriesre-

quire no clocks or refreshing and have equal access and

cycle times. Inputs are fully TTL-compatible. The RAMs

operate from a single 5V±10% tolerance power supply.

Withbatterybackup,dataintegrityismaintainedforsupply

voltages down to 2.0V. Current drain is 10 µA from a 2.0V

supply.

The P4C163 and P4C163L are available in 28-pin 300 mil

DIP and SOJ, 28-pin 350 x 550 mil LCC, and 28-pin

CERPACKpackagesprovidingexcellentboardleveldensi-

ties.

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATIONS

DIP (P5, C5), SOJ (J5)

CERPACK (F4) SIMILAR

LCC (L5)

Document # SRAM120 REV C

Revised August 2006

12 3 4 5 6 7...12

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