生命周期: | Obsolete | 包装说明: | POST/STUD MOUNT, O-MUPM-H3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.72 |
其他特性: | HIGH RELIABILITY | 标称电路换相断开时间: | 35 µs |
配置: | SINGLE | 关态电压最小值的临界上升速率: | 20 V/us |
最大直流栅极触发电流: | 200 mA | 最大直流栅极触发电压: | 3 V |
最大维持电流: | 600 mA | JESD-30 代码: | O-MUPM-H3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 认证状态: | Not Qualified |
最大均方根通态电流: | 355 A | 重复峰值关态漏电流最大值: | 30000 µA |
断态重复峰值电压: | 200 V | 重复峰值反向电压: | 200 V |
表面贴装: | NO | 端子形式: | HIGH CURRENT CABLE |
端子位置: | UPPER | 触发设备类型: | SCR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
P205PH02CG0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),355A I(T),TO-209VAR | |
P205PH02CGO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 355 A, 200 V, SCR | |
P205PH02CH0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),355A I(T),TO-209VAR | |
P205PH02CJ0 | LITTELFUSE |
获取价格 |
Silicon Controlled Rectifier, 355000mA I(T), 200V V(DRM), | |
P205PH02D2K0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 355000mA I(T), 200V V(DRM) | |
P205PH02D2KO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 355A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element | |
P205PH02DG | IXYS |
获取价格 |
Silicon Controlled Rectifier, 355 A, 200 V, SCR | |
P205PH02DG0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),355A I(T),TO-209VAR | |
P205PH02DH | IXYS |
获取价格 |
Silicon Controlled Rectifier, 355A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element | |
P205PH02DH0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),355A I(T),TO-209VAR |