生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 标称电路换相断开时间: | 35 µs |
关态电压最小值的临界上升速率: | 20 V/us | 最大直流栅极触发电流: | 200 mA |
最大直流栅极触发电压: | 3 V | 最大维持电流: | 600 mA |
最大漏电流: | 30 mA | 通态非重复峰值电流: | 3600 A |
最大通态电流: | 355000 A | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 断态重复峰值电压: | 200 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | NO |
触发设备类型: | SCR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
P205PH02CGO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 355 A, 200 V, SCR | |
P205PH02CH0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),355A I(T),TO-209VAR | |
P205PH02CJ0 | LITTELFUSE |
获取价格 |
Silicon Controlled Rectifier, 355000mA I(T), 200V V(DRM), | |
P205PH02D2K0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 355000mA I(T), 200V V(DRM) | |
P205PH02D2KO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 355A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element | |
P205PH02DG | IXYS |
获取价格 |
Silicon Controlled Rectifier, 355 A, 200 V, SCR | |
P205PH02DG0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),355A I(T),TO-209VAR | |
P205PH02DH | IXYS |
获取价格 |
Silicon Controlled Rectifier, 355A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element | |
P205PH02DH0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),355A I(T),TO-209VAR | |
P205PH02DHO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 355A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element |